Share Email Print
cover

Proceedings Paper

Low-threshold visible laser diodes for high-power applications
Author(s): Harvey B. Serreze
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

High performance, AlGaInP, strained-layer single quantum well, semiconductor laser diodes emitting in the 630 to 680 nm spectral range have been designed, fabricated, and characterized. Thermal calculations and modelling have been carried out both to estimate the thermal resistivity of various AlGaInP alloys and to optimize the device geometry and performance. Threshold current densities below 300 A/cm2 at room temperature, cw outputs over 1 Watt, and operating lifetimes in excess of 10,000 hours have been achieved.

Paper Details

Date Published: 16 February 1993
PDF: 6 pages
Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141112
Show Author Affiliations
Harvey B. Serreze, McDonnell Douglas Electronic Systems Co. (United States)


Published in SPIE Proceedings Vol. 1788:
Sources and Detectors for Fiber Communications
Stephen D. Hersee, Editor(s)

© SPIE. Terms of Use
Back to Top