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Proceedings Paper

AlGaInP materials grown by elemental-source molecular beam epitaxy
Author(s): John A. Varriano; M. W. Koch; Glenn E. Kohnke; F. G. Johnson; Gary W. Wicks
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Paper Abstract

We report on the growth of AlGaInP materials on GaAs substrates using solid, elemental phosphorus in a valved cracker source by molecular beam epitaxy (MBE). The two ternaries are found to be of comparable or better quality than material grown by other, more conventional techniques which use phosphine. The successful growth and doping of the quaternary is reported and recent work in the growth of GaInP quantum well (QW) lasers is discussed. Finally, the compatibility of the valved source in growing arsenide/phosphide heterojunctions is demonstrated.

Paper Details

Date Published: 16 February 1993
PDF: 10 pages
Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141111
Show Author Affiliations
John A. Varriano, Univ. of Rochester (United States)
M. W. Koch, Univ. of Rochester (United States)
Glenn E. Kohnke, Univ. of Rochester (United States)
F. G. Johnson, Univ. of Rochester (United States)
Gary W. Wicks, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 1788:
Sources and Detectors for Fiber Communications
Stephen D. Hersee, Editor(s)

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