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Proceedings Paper

InGaAs/AlGaAs strained quantum-well diode lasers
Author(s): Christine A. Wang; Hong K. Choi; James N. Walpole; Emily S. Kintzer; Stephen R. Chinn; Dean Z. Tsang; John D. Woodhouse; Joseph P. Donnelly
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Paper Abstract

The OMVPE growth and performance of graded-index separate-confinement heterostructure strained quantum-well InGaAs-AlGaAs diode lasers are reviewed. Broad-stripe lasers have exhibited Jth as low as 60 A cm-2 for a cavity length L equals 1500 micrometers and differential quantum efficiency (eta) d as high as 90% for L equals 300 micrometers . Similar heterostructures have been used to fabricate traveling wave amplifiers with a laterally tapered gain region that emit over 1 W cw in a nearly diffraction-limited spatial lobe at 0.98 micrometers , linear arrays of 200-micrometers -long uncoated ridge-waveguide lasers with average threshold currents of 4 mA and (eta) d approximately 90%, and high-power broad-stripe lasers with power conversion efficiency exceeding 50% at 75 degree(s)C.

Paper Details

Date Published: 16 February 1993
PDF: 10 pages
Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141105
Show Author Affiliations
Christine A. Wang, Lincoln Lab./MIT (United States)
Hong K. Choi, Lincoln Lab./MIT (United States)
James N. Walpole, Lincoln Lab./MIT (United States)
Emily S. Kintzer, Lincoln Lab./MIT (United States)
Stephen R. Chinn, Lincoln Lab./MIT (United States)
Dean Z. Tsang, Lincoln Lab./MIT (United States)
John D. Woodhouse, Lincoln Lab./MIT (United States)
Joseph P. Donnelly, Lincoln Lab./MIT (United States)


Published in SPIE Proceedings Vol. 1788:
Sources and Detectors for Fiber Communications
Stephen D. Hersee, Editor(s)

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