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Proceedings Paper

Effect of top-contact geometry on spreading resistance in proton-implanted vertical-cavity surface-emitting lasers
Author(s): Marek Osinski; Wlodzimierz Nakwaski; Julian Cheng
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Paper Abstract

Analytical expressions are derived for calculating electrical spreading resistance in vertical- cavity surface-emitting diode lasers. Three contact configurations are considered: annular, circular, and broad-area. Calculations performed for proton-implanted surface-emitting lasers demonstrate that low values of series resistance can be achieved by combining the broad-area or circular contact configuration with a sufficiently large active-region diameter.

Paper Details

Date Published: 16 February 1993
PDF: 11 pages
Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141102
Show Author Affiliations
Marek Osinski, Univ. of New Mexico (United States)
Wlodzimierz Nakwaski, Univ. of New Mexico (United States)
Julian Cheng, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 1788:
Sources and Detectors for Fiber Communications
Stephen D. Hersee, Editor(s)

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