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Proceedings Paper

InGaAsP/InGaAs multi-quantum-well distributed-Bragg-reflector lasers grown by chemical beam epitaxy
Author(s): Fow-Sen Choa; Won-Tien Tsang; Ralph A. Logan
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Paper Abstract

We report the fabrication and performance of InGaAs/InGaAsP multi-quantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy. By using a long and weak grating, which was made on a thin and uniformly grown quaternary layer, we have been able to well control the grating coupling constant, (kappa) . For most of the lasers the measured linewidths are below 10 MHz. A record high side mode suppression ratio of 58.5 dB was obtained.

Paper Details

Date Published: 16 February 1993
PDF: 5 pages
Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141101
Show Author Affiliations
Fow-Sen Choa, Univ. of Maryland/Baltimore County (United States)
Won-Tien Tsang, AT&T Bell Labs. (United States)
Ralph A. Logan, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1788:
Sources and Detectors for Fiber Communications
Stephen D. Hersee, Editor(s)

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