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Proceedings Paper

InGaAs/GaAs strained quantum-well lasers
Author(s): Niloy K. Dutta
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Paper Abstract

The fabrication and performance characteristics of InGaAs/GaAs strained quantum well lasers are described. Lasers with low threshold current, high output power and excellent reliability have been fabricated. In0.2Ga0.8As/GaAs lasers emitting near 1 micrometers are useful as pump sources for erbium doped optical fiber amplifiers.

Paper Details

Date Published: 16 February 1993
PDF: 6 pages
Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141099
Show Author Affiliations
Niloy K. Dutta, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 1788:
Sources and Detectors for Fiber Communications
Stephen D. Hersee, Editor(s)

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