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Proceedings Paper

Development of GaInAsP/GaAs strained-layer quantum-well diode lasers
Author(s): Steven H. Groves; Zong-Long Liau; Susan C. Palmateer; James N. Walpole; Leo J. Missaggia
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Paper Abstract

Diode lasers with InGaAs strained-layer quantum wells and GaInP cladding layers for operation at 980 nm have been investigated. Two types of device structure, differing in the optical-waveguide material have been grown by organometallic vapor phase epitaxy. Threshold current densities as low as 85 A/cm2 and differential efficiencies as high as 93% have been measured on broad-area devices. Mass transport of GaInP and GaInAsP alloys has been used to fabricate buried-heterostructure lasers with threshold currents as low as 3 mA and output powers of 30 mW/facet for uncoated devices. Threshold currents of 7 mA and single spatial mode output power in excess of 50 mW/facet have been obtained for uncoated, ridge-waveguide lasers.

Paper Details

Date Published: 16 February 1993
PDF: 9 pages
Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141096
Show Author Affiliations
Steven H. Groves, Lincoln Lab./MIT (United States)
Zong-Long Liau, Lincoln Lab./MIT (United States)
Susan C. Palmateer, Lincoln Lab./MIT (United States)
James N. Walpole, Lincoln Lab./MIT (United States)
Leo J. Missaggia, Lincoln Lab./MIT (United States)


Published in SPIE Proceedings Vol. 1788:
Sources and Detectors for Fiber Communications
Stephen D. Hersee, Editor(s)

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