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Proceedings Paper

Fabry-Perot optical intensity modulator using merged epitaxial lateral overgrowth silicon films
Author(s): HanChieh Chao; Gerold W. Neudeck
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Paper Abstract

This research uses merged epitaxial lateral overgrowth (MELO) of crystalline silicon combined with a multi-dielectric layers as a high reflection mirror; resulting in high-quality silicon Fabry-Perot cavity with well-controlled cavity length and high Finesse. The MELO technique has been employed in the development of novel devices such as accelerometers and pressure sensors. Also, the same growing techniques, selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO), have already been applied in development of three dimensional MOS and bipolar transistors. Hence this cavity forming technique is integrated circuit compatible.

Paper Details

Date Published: 2 September 1992
PDF: 8 pages
Proc. SPIE 1779, Optical Design and Processing Technologies and Applications, (2 September 1992); doi: 10.1117/12.140953
Show Author Affiliations
HanChieh Chao, Purdue Univ. (United States)
Gerold W. Neudeck, Purdue Univ. (United States)

Published in SPIE Proceedings Vol. 1779:
Optical Design and Processing Technologies and Applications
Robert J. Heaston, Editor(s)

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