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Proceedings Paper

High-responsivity UV photoconductors based on GaN epilayers
Author(s): Larry F. Reitz
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Paper Abstract

This paper will describe a new UV sensitive photoconductive detector based on gallium nitride (GaN) material. Data will be presented on devices fabricated over the past several months. These devices have a high responsivity between 200 to 360 nm with a sharp long wavelength cutoff at 360 nm. The detectors have measured gains in excess of six thousand and frequency responses of greater than 100 Hz. The devices have measured dynamic ranges of over four orders of magnitude and operate with bias voltages of 5 to 10 volts. Device designs will be shown that can be utilized in the development of a large monolithic focal plane for UV imaging.

Paper Details

Date Published: 22 January 1993
PDF: 7 pages
Proc. SPIE 1764, Ultraviolet Technology IV, (22 January 1993); doi: 10.1117/12.140863
Show Author Affiliations
Larry F. Reitz, Air Force Wright Lab. (United States)

Published in SPIE Proceedings Vol. 1764:
Ultraviolet Technology IV
Robert E. Huffman, Editor(s)

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