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Proceedings Paper

Peak fringe scanning microscopy: submicron 3D measurement of semiconductor components
Author(s): Paul C. Montgomery; Jean-Pierre Fillard
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Paper Abstract

Phase shifting microscopy is a technique that has been successfully developed for performing surface metrology on optical and microelectronic materials. It has proved particularly well adapted to applications in which the samples are nearly flat, or in which the features are smaller than (lambda) /4 in height, giving angstrom vertical resolution. Because of the problems in phase unwrapping due to the cyclic nature of fringes, and the limited depth of field in high magnification work, it is not yet practically suited to shape measurement of semiconductor components where step height may be many microns. To overcome this problem we have developed a new technique, called Peak Fringe Stepping Microscopy (PFSM), which has a depth of field and a working height range of 15 micrometers , and up to 4 nm vertical resolution. A whole 3-D image can be built up or critical measurements at specific points can be made. The technique is based on white light interferometry combined with precise height stepping of the sample and image processing. Some examples of shape measurement are given in the analysis of various electro-optical and microelectronic structures.

Paper Details

Date Published: 5 February 1993
PDF: 12 pages
Proc. SPIE 1755, Interferometry: Techniques and Analysis, (5 February 1993); doi: 10.1117/12.140772
Show Author Affiliations
Paul C. Montgomery, Univ. de Montpellier II (France)
Jean-Pierre Fillard, Univ. de Montpellier II (France)


Published in SPIE Proceedings Vol. 1755:
Interferometry: Techniques and Analysis
Gordon M. Brown; Osuk Y. Kwon; Malgorzata Kujawinska; Graeme T. Reid, Editor(s)

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