Share Email Print
cover

Proceedings Paper

Multilayer thin-film design as far-ultraviolet quarterwave retarders
Author(s): Jongmin Kim; Muamer Zukic; Douglas G. Torr; Michele Wilson McColgan
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

At short wavelengths, such as FUV, transparent, optically active materials are scarce. Reflection phase retardation by a multilayer thin film can be a good alternative in this wavelength region. We design a multilayer quarterwave retarder by calculating the electric fields at each boundary in the multilayer thin film. Using this method, we achieve designs of FUV multilayers which provide high, matched reflectances for both s- and p-polarization states, and at the same time a phase difference between these two states of nearly 90 deg. For example, a quarterwave retarder designed at the Lyman-alpha line (121.6 nm) has 81.05 percent reflectance for the s-polarization and 81.04 percent for the p-polarization state. The phase difference between these two polarization states is 90.07 deg. For convenience the retarders are designed for 45 deg angle of incidence, but our design approach can be used for any other angle of incidence. Aluminum and MgF2 are used as film materials and an opaque thick film of aluminum as the substrate.

Paper Details

Date Published: 21 January 1993
PDF: 10 pages
Proc. SPIE 1742, Multilayer and Grazing Incidence X-Ray/EUV Optics for Astronomy and Projection Lithography, (21 January 1993); doi: 10.1117/12.140574
Show Author Affiliations
Jongmin Kim, Univ. of Alabama in Huntsville (United States)
Muamer Zukic, Univ. of Alabama in Huntsville (United States)
Douglas G. Torr, Univ. of Alabama in Huntsville (United States)
Michele Wilson McColgan, Advanced Optical Systems (United States)


Published in SPIE Proceedings Vol. 1742:
Multilayer and Grazing Incidence X-Ray/EUV Optics for Astronomy and Projection Lithography
Richard B. Hoover; Arthur B. C. Walker, Editor(s)

© SPIE. Terms of Use
Back to Top