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Proceedings Paper

Linewidth of GaInAsSb diode lasers
Author(s): V. G. Avetisov; Amir N. Khusnutdinov; Alexander I. Nadezhdinskii; Yury P. Yakovlev; Alexej N. Baranov; A. I. Imenkov
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Paper Abstract

The linewidth of GaInAsSb diode lasers operating at 1.8-2.4 micron has been measured using gas absorption line as a frequency discriminator. The linewidth of the lasers varied from 3 to 60 MHz, could alter at least by an order of magnitude, and decrease as the temperature decreases and emission power increases. The results show that GaInAsSb lasers are suitable for high-resolution molecular spectroscopy.

Paper Details

Date Published: 1 April 1992
PDF: 6 pages
Proc. SPIE 1724, Tunable Diode Laser Applications, (1 April 1992); doi: 10.1117/12.140317
Show Author Affiliations
V. G. Avetisov, General Physics Institute (Russia)
Amir N. Khusnutdinov, General Physics Institute (Russia)
Alexander I. Nadezhdinskii, General Physics Institute (Russia)
Yury P. Yakovlev, A.F. Ioffe Physical-Technical Institute (Russia)
Alexej N. Baranov, A.F. Ioffe Physical-Technical Institute (Russia)
A. I. Imenkov, A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 1724:
Tunable Diode Laser Applications
Alexander I. Nadezhdinskii; Alexander M. Prokhorov, Editor(s)

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