Proceedings Paper
Measurements of thermal radiation induced by laser excitation of semiconductor structures| Format | Member Price | Non-Member Price |
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Paper Abstract
Kinetics and magnitude of integral flow of thermal radiation excited by laser beam in semiconductors and metal-semiconductor structures are measured. It is shown that such measurements allow one to control surface properties of a semiconductor, to determine a velocity of surface carriers recombination, to reveal near-surface macrodefects, to define the quality of metal-semiconductor interface, etc., and, in addition, to draw conclusions about the conditions and mechanisms for laser-stimulated processes of diffusion, defects creation, p-n junction formation, and other processes of laser modification of semiconductor structures.
Paper Details
Date Published: 9 February 1993
PDF: 6 pages
Proc. SPIE 1712, 14th Symposium on Photonic Measurement, (9 February 1993); doi: 10.1117/12.140173
Published in SPIE Proceedings Vol. 1712:
14th Symposium on Photonic Measurement
PDF: 6 pages
Proc. SPIE 1712, 14th Symposium on Photonic Measurement, (9 February 1993); doi: 10.1117/12.140173
Show Author Affiliations
Sergey V. Svechnikov, Institute of Semiconductors (Ukraine)
Leonid L. Fedorenko, Institute of Semiconductors (Ukraine)
Leonid L. Fedorenko, Institute of Semiconductors (Ukraine)
E. B. Kaganovich, Institute of Semiconductors (Ukraine)
V. A. Antonov, Institute of Semiconductors (Ukraine)
V. A. Antonov, Institute of Semiconductors (Ukraine)
Published in SPIE Proceedings Vol. 1712:
14th Symposium on Photonic Measurement
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