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Proceedings Paper

All-optical bistable switching with gain in an InGaAs/GaAs quantum-well waveguide
Author(s): Ta-Wei Kao; Patrick LiKamWa; Alan Miller; M. Ogawa; Robert M. Park; Paul W. Cooke
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Paper Abstract

The gain characteristics of strained layer InGaAs quantum well laser amplifiers grown on GaAs substrates have been characterized using a Ti-sapphire laser in both CW and self-mode- locked configuration. All-optical bistability was achieved in such a device through the nonlinear refractive index that arises as a result of the gain saturation of the diode amplifier at high optical intensities. The Ti-sapphire laser was modified to produce wavelength tunable pulses of the order of 150 fs with a 15 nm spectral bandwidth in order to measure the dynamics of the gain using a time resolved optical pump-probe technique. The gain saturation occurs on the time scale of the pulse width of the laser and the initial recovery is extremely fast. This initial speedy recovery on a time scale of 100 fs is followed by a slower recovery with a time constant of 3 ps followed by a much slower recovery of 500 ps.

Paper Details

Date Published: 24 August 1992
PDF: 6 pages
Proc. SPIE 1704, Advances in Optical Information Processing V, (24 August 1992); doi: 10.1117/12.139919
Show Author Affiliations
Ta-Wei Kao, CREOL/Univ. of Central Florida (United States)
Patrick LiKamWa, CREOL/Univ. of Central Florida (United States)
Alan Miller, CREOL/Univ. of Central Florida (United States)
M. Ogawa, Univ. of Florida (United States)
Robert M. Park, Univ. of Florida (United States)
Paul W. Cooke, SLCET-ED (United States)


Published in SPIE Proceedings Vol. 1704:
Advances in Optical Information Processing V
Dennis R. Pape, Editor(s)

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