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Proceedings Paper

Low-threshold GaAlAs/GaAlAs ridge waveguide lasers with dry-etched facets
Author(s): Szutsun Simon Ou; Jane J. Yang; Michael Jansen; Moshe Sergant; Cynthia A. Hess; Chan A. Tu
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Paper Abstract

Low-threshold, high-performance dry-etched ridge waveguide lasers with dry etched facets are of interest for monolithic two-dimensional coherent applications such as optical interconnects and optoelectronic integrated circuits. We report on low threshold current and wavelength emission < 8000 angstroms laser diodes with short cavity and dry etched facets. The facets are fabricated by reactive ion etching, which provides nearly vertical walls. For the first time, coherent GaAlAs/GaAlAs laser diodes (emission wavelength 7940 angstroms at room temperature) with cw threshold currents as low as 4 mA (room temperature) and 0.8 mA (at 77 degree(s)K) were achieved on a 4-micrometers -wide, 100-micrometers -long device.

Paper Details

Date Published: 24 August 1992
PDF: 5 pages
Proc. SPIE 1704, Advances in Optical Information Processing V, (24 August 1992); doi: 10.1117/12.139917
Show Author Affiliations
Szutsun Simon Ou, TRW Space and Technology Group (United States)
Jane J. Yang, TRW Space and Technology Group (United States)
Michael Jansen, TRW Space and Technology Group (United States)
Moshe Sergant, TRW Space and Technology Group (United States)
Cynthia A. Hess, TRW Space and Technology Group (United States)
Chan A. Tu, TRW Space and Technology Group (United States)


Published in SPIE Proceedings Vol. 1704:
Advances in Optical Information Processing V
Dennis R. Pape, Editor(s)

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