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Proceedings Paper

Characterization of PECVD process-induced degradation of EEPROM reliability
Author(s): Mark D. Griswold; Frank R. Myers; Karen Ramondetta; Alex Shaw
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Paper Abstract

MOSFET instabilities as a result of plasma processing have received significant attention in recent years. The focus of previous research has been directed at basic MOSFET devices. This paper describes the effects of PECVD PSG passivation on EEPROM device reliability through the use of response surface methodology (RSM). The investigation produced evidence of hydrogen induced EEPROM device degradation. An activation energy of 0.41 eV has been calculated using array cycling data at temperatures between 85 degree(s)C and 125 degree(s)C. The use of FTIR analysis produced excellent correlation between accelerated electron/hold trapping and the Si-H content of the as-deposited film. This result demonstrates that FTIR measurements serve as an effective process monitor of hydrogen induced degradation. The effects of PECVD process parameters on film integrity have been evaluated through the utilization of a passivation integrity etch. The process window has been found to be bounded by poor write/erase characteristics at high Si-H levels and poor film integrity at very low Si-H levels in the as-deposited film.

Paper Details

Date Published: 14 January 1993
PDF: 12 pages
Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139358
Show Author Affiliations
Mark D. Griswold, Motorola, Inc. (United States)
Frank R. Myers, Motorola, Inc. (United States)
Karen Ramondetta, Motorola, Inc. (United States)
Alex Shaw, Motorola, Inc. (United States)

Published in SPIE Proceedings Vol. 1802:
Microelectronics Manufacturing and Reliability
Barbara Vasquez; Anant G. Sabnis; Kenneth P. MacWilliams; Jason C.S. Woo, Editor(s)

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