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Proceedings Paper

Characterization of polysilicon thin-film resistors with irreversible resistance transition
Author(s): Dragan M. Petkovic
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Paper Abstract

Under large voltage bias, the polysilicon thin film resistor can be switched to a 'short' state having resistance reduction by a factor of more than 100. In this paper, we will characterize an irreversible resistance transition in boron doped LPCVD polysilicon thin film resistors. The experimental results describing the effect of doping concentration, polysilicon film thickness and device dimensions on the resistance transition phenomena will be given. Also, the results of reliability testing will be reported.

Paper Details

Date Published: 14 January 1993
PDF: 12 pages
Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139357
Show Author Affiliations
Dragan M. Petkovic, Elektronska Industrija (Serbia)

Published in SPIE Proceedings Vol. 1802:
Microelectronics Manufacturing and Reliability
Barbara Vasquez; Anant G. Sabnis; Kenneth P. MacWilliams; Jason C.S. Woo, Editor(s)

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