Share Email Print

Proceedings Paper

Hot-carrier effects in thin-film, p-channel, hydrogen-passivated polysilicon-on-insulator LDD MOSFETs
Author(s): Swapan Bhattacharya; R. Kovelamudi; S. Batra; M. Lobo; Sanjay K. Banerjee; Bich-Yen Nguyen; Phil J. Tobin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Hot-carrier stressing has been shown to degrade hydrogen-passivated p-channel polysilicon-on- oxide MOSFETs by two parallel degradation mechanisms. We observe hot-carrier-induced degradation of hydrogen passivation at grain boundaries through the creation of additional donor-type grain boundary states in the channel, as well as hot-electron trapping in the gate oxide. Due to the presence of both of these degradation mechanisms, p-channel polysilicon MOSFETs exhibit anomalous hot-carrier-induced degradation behavior that has not been observed in bulk p-MOSFETs.

Paper Details

Date Published: 14 January 1993
PDF: 11 pages
Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139356
Show Author Affiliations
Swapan Bhattacharya, Univ. of Texas/Austin (United States)
R. Kovelamudi, Univ. of Texas/Austin (United States)
S. Batra, Univ. of Texas/Austin (United States)
M. Lobo, Univ. of Texas/Austin (United States)
Sanjay K. Banerjee, Univ. of Texas/Austin (United States)
Bich-Yen Nguyen, Motorola, Inc. (United States)
Phil J. Tobin, Motorola, Inc. (United States)

Published in SPIE Proceedings Vol. 1802:
Microelectronics Manufacturing and Reliability
Barbara Vasquez; Anant G. Sabnis; Kenneth P. MacWilliams; Jason C.S. Woo, Editor(s)

© SPIE. Terms of Use
Back to Top