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Proceedings Paper

Temperature dependence of hot-carrier lifetime due to trapped charge and interface state generation
Author(s): Miryeong Song; Kenneth P. MacWilliams; Jason C.S. Woo
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Paper Abstract

Hot carrier device lifetime diminishes dramatically as operating temperature decreases. The hot carrier lifetime at liquid nitrogen temperature is usually several orders of magnitude lower than at room temperature. In this work, we show the dependence of hot carrier device lifetime of LDD nMOSFETs on temperature and stress condition in the temperature range from 78 K to room temperature. There is a cross-over point at which the worst-case hot carrier stress condition switches from Vg approximately equals 1/2 Vd (Vg Ibmax) to Vg equals Vd with decreasing temperature. Consequently, the dominant damage mechanism switches from interface state generation to trapped charge generation.

Paper Details

Date Published: 14 January 1993
PDF: 5 pages
Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139355
Show Author Affiliations
Miryeong Song, The Aerospace Corp. and Univ. of California/Los Angeles (United States)
Kenneth P. MacWilliams, The Aerospace Corp. (United States)
Jason C.S. Woo, Univ. of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 1802:
Microelectronics Manufacturing and Reliability
Barbara Vasquez; Anant G. Sabnis; Kenneth P. MacWilliams; Jason C.S. Woo, Editor(s)

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