Share Email Print

Proceedings Paper

Effects of hot light holes in n-channel silicon-on-sapphire MOSFETs
Author(s): Emil Yu-ming Chao; Guann-pyng Li
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Silicon on sapphire (SOS) MOSFETs are light hole devices. Hot carrier induced degradation of SOS FETs are found to correlate with both substrate and gate currents. DC stressing experiments show that the effects of hot light holes are mainly charge trapping, and cause very little interface state generation. At gate biases that give rise to mixed carrier stressing, interface states are created in significant quantities. Mechanisms of hot carrier degradation in light hole devices are found to be consistent with those proposed for bulk silicon devices.

Paper Details

Date Published: 14 January 1993
PDF: 8 pages
Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139353
Show Author Affiliations
Emil Yu-ming Chao, Univ. of California/Irvine (United States)
Guann-pyng Li, Univ. of California/Irvine (United States)

Published in SPIE Proceedings Vol. 1802:
Microelectronics Manufacturing and Reliability
Barbara Vasquez; Anant G. Sabnis; Kenneth P. MacWilliams; Jason C.S. Woo, Editor(s)

© SPIE. Terms of Use
Back to Top