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Proceedings Paper

Impact of statistics on hot-carrier lifetime estimates of n-channel MOSFETs
Author(s): Eric S. Snyder; Ashish Kapoor; Clint Anderson
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Paper Abstract

A unique statistical approach to hot-carrier lifetime estimates is proposed. Unlike previous work, this approach emphasizes the inherent variability in IC processing. As a result, log- normal distributions of hot-carrier lifetimes in micron and submicron n-channel MOS transistors are presented for the first time. It is also shown that the variation in these distributions can be independent of stress voltage. Therefore, accelerated voltage tests can be used to quickly gather statistical data. Without this statistical information, conventional lifetime techniques significantly overestimate the hot-carrier lifetime.

Paper Details

Date Published: 14 January 1993
PDF: 8 pages
Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139350
Show Author Affiliations
Eric S. Snyder, Sandia National Labs. (United States)
Ashish Kapoor, LSI Logic Corp. (United States)
Clint Anderson, Signetics Co. (United States)

Published in SPIE Proceedings Vol. 1802:
Microelectronics Manufacturing and Reliability
Barbara Vasquez; Anant G. Sabnis; Kenneth P. MacWilliams; Jason C.S. Woo, Editor(s)

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