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Proceedings Paper

Failure analysis for improved electromigration performance
Author(s): Kevin Hussey; E. Widener; Mark Fernandes; Kuan Yu Fu; Tom Guckert
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Paper Abstract

The development of a metallization process with optical resistance to electromigration is, by nature, an iterative process. Accelerated stressing of metal test patterns allow quantitative comparison of the electromigration performance of metal fabricated with experimental processes. Understanding of structural differences between process alternatives can be enhanced by physical characterization of unstressed samples. Failure analysis of stressed structures provides insight into the relationship of these differences to the physical failure mechanisms. The analyses which identified process modifications to achieve improved electromigration performance are discussed.

Paper Details

Date Published: 14 January 1993
PDF: 9 pages
Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139344
Show Author Affiliations
Kevin Hussey, Motorola, Inc. (United States)
E. Widener, Motorola, Inc. (United States)
Mark Fernandes, Motorola, Inc. (United States)
Kuan Yu Fu, Motorola, Inc. (United States)
Tom Guckert, Motorola, Inc. (United States)

Published in SPIE Proceedings Vol. 1802:
Microelectronics Manufacturing and Reliability
Barbara Vasquez; Anant G. Sabnis; Kenneth P. MacWilliams; Jason C.S. Woo, Editor(s)

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