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Proceedings Paper

Surface defect analysis of semiconductor materials and devices using nanoscopy techniques
Author(s): Denis Montaner; Paul C. Montgomery; Eric Andre
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Paper Abstract

With manufacturing tolerances of microelectronic and electro-optical devices being improved to well below a micron, it is becoming increasingly difficult to check both the form of surface features and the presence of defects in a routine manner. These defects may be material or process related. In this paper we demonstrate the advantages of combining advanced optical methods with digital image processing, to form what we call 'Nanoscopy' techniques, for sub- micron surface measurement metrology. We distinguish between two imaging techniques, one for high resolution analysis of near flat surfaces and small features and the other for shape measurement of multi-micron high components. These are combined in the same instrument. The first, Phase Stepping Microscopy (PSM), is illustrated with examples of surface roughness measurement, epilayer defect analysis and feature identification after chemical etching. The second, Peak Fringe Stepping Microscopy (PFSM), is presented with examples of shape measurement of an optical laser guide and a Hetero-structure Bipolar Transistor (HBT).

Paper Details

Date Published: 15 December 1992
PDF: 12 pages
Proc. SPIE 1776, Interferometry: Surface Characterization and Testing, (15 December 1992); doi: 10.1117/12.139244
Show Author Affiliations
Denis Montaner, Univ. Montpellier II (France)
Paul C. Montgomery, Univ. Montpellier II (France)
Eric Andre, Univ. Montpellier II (France)


Published in SPIE Proceedings Vol. 1776:
Interferometry: Surface Characterization and Testing
Katherine Creath; John E. Greivenkamp, Editor(s)

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