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Proceedings Paper

New type of InAs-based IR-MIS avalanche photodetector
Author(s): Alexander G. Solonko
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Paper Abstract

It has been shown in [1—2] that using MIS—avalanche structure as a sensitive head in modern optoelectronic devices could open new vistas in their applications in spectral measurements, medicine, chemistry etc. In this paper are presented results concerning creation of a new type of IR—(up to 3.3 pm) MIS Avalanche Photodetector based on InAs substrate. The coefficient of light pulses(l pm) internal avalanche multiplication for the best samples under LN conditions (77 K) was about M = 10 - 12.

Paper Details

Date Published: 5 January 1993
PDF: 4 pages
Proc. SPIE 1762, Infrared Technology XVIII, (5 January 1993); doi: 10.1117/12.139001
Show Author Affiliations
Alexander G. Solonko, Institute of High Temperatures (Russia)


Published in SPIE Proceedings Vol. 1762:
Infrared Technology XVIII
Bjorn F. Andresen; Freeman D. Shepherd, Editor(s)

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