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Proceedings Paper

Technique of saturation-capacity enhancement in infrared MOS-addressable FPA detector
Author(s): Jin-Shown Shie
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Paper Abstract

A new concept of circuit structure of FPA multiplexer is proposed here, which incorporates an additional MOS switch and a charge-storage capacitor into each pixel of the conventional circuit. The MOS switches are actuated with a high frequency pixel clock, thus enabling the photoexcited charges in each detector to be shared and shielded by the individual storage capacitor. The action of the charge sharing has been analyzed in close form and been simulated by SPICE program. It shows that the saturation capacity indeed can be enhanced. The technique therefore can provide a longer integration time and an additional electronic iris function by controlling the pixel-clock behavior.

Paper Details

Date Published: 5 January 1993
PDF: 5 pages
Proc. SPIE 1762, Infrared Technology XVIII, (5 January 1993); doi: 10.1117/12.138991
Show Author Affiliations
Jin-Shown Shie, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1762:
Infrared Technology XVIII
Bjorn F. Andresen; Freeman D. Shepherd, Editor(s)

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