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Proceedings Paper

High-performance 1040 x 1040-element PtSi Schottky-barrier image sensor
Author(s): Masafumi Kimata; Naoki Yutani; Natsuro Tsubouchi; Toshiki Seto
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Paper Abstract

We have developed a monolithic 1040 X 1040 element PtSi Schottky-barrier infrared image sensor. This device uses the Charge Sweep Device readout architecture with four parallel outputs. The pixel size is 17 X 17 micrometers 2, which is 56% of that of our 512 X 512 element PtSi image sensor. In order to keep sufficient sensitivity with such a small pixel, we have developed a 1.5 micrometers Schottky-barrier process technology and improved the fill factor. The fill factor of this device is 53%. As a result of this improvement, a high differential temperature response of 9.6 X 103 electrons/K and a low noise equivalent temperature difference of 0.1 K have been achieved with f/1.2 optics. We have also improved the saturation characteristics of the device by optimizing the impurity concentrations of the isolation region and guard ring. The saturation level is 1.6 X 106 electrons at a detector reset voltage of 4 V.

Paper Details

Date Published: 5 January 1993
PDF: 11 pages
Proc. SPIE 1762, Infrared Technology XVIII, (5 January 1993); doi: 10.1117/12.138975
Show Author Affiliations
Masafumi Kimata, Mitsubishi Electric Corp. (Japan)
Naoki Yutani, Mitsubishi Electric Corp. (Japan)
Natsuro Tsubouchi, Mitsubishi Electric Corp. (Japan)
Toshiki Seto, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 1762:
Infrared Technology XVIII
Bjorn F. Andresen; Freeman D. Shepherd, Editor(s)

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