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Proceedings Paper

Evaluation of high-quantum-efficiency silicon photodiodes for calibration in the 400-nm to 900-nm spectral region
Author(s): Carlos R. Jorquera; Carol J. Bruegge; Valerie G. Duval
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Paper Abstract

The reflectance and internal quantum efficiency (QE) of three single-element photodiodes are determined using two different light-trapping devices. The QED-200 light trapping device which is based on inversion layer photodiodes exhibits the best performance within the short wavelengths of the visible spectrum (VIS), while the A-O device based on p-n photodiodes, performs best in the long wave VIS up to 950 nm. The combination of the two light-traps provides nearly 100 percent external QE coverage from 400 to 950 nm. The reflectances and internal QE were determined within this spectral range for three photodiodes: UV100, an inversion layer photodiode; X-UV100, a shallow diffused n-p photodiode; and 10DPI/SB, a blue-enhanced p-n photodiode.

Paper Details

Date Published: 5 January 1993
PDF: 10 pages
Proc. SPIE 1762, Infrared Technology XVIII, (5 January 1993); doi: 10.1117/12.138952
Show Author Affiliations
Carlos R. Jorquera, Jet Propulsion Lab. (United States)
Carol J. Bruegge, Jet Propulsion Lab. (United States)
Valerie G. Duval, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 1762:
Infrared Technology XVIII
Bjorn F. Andresen; Freeman D. Shepherd, Editor(s)

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