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Proceedings Paper

X-ray diode using a silicon field-emission photocathode
Author(s): Wael I. Karain; Larry V. Knight; David D. Allred; Arturo Reyes-Mena
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Paper Abstract

We have produced arrays of 10,000 sharp p-type silicon points using an etch plus oxidation method. These points were used as electron emitters. No high vacuum caseation or high temperature cleaning was needed to observe the electron emission. These are seen to be photosensitive sources of electrons at 200 K and 300 K. They were also used to produce AlK(alpha ) x rays. This constitutes the first use of etched, point arrays for generating electrons for x-ray sources.

Paper Details

Date Published: 13 January 1993
PDF: 7 pages
Proc. SPIE 1741, Soft X-Ray Microscopy, (13 January 1993); doi: 10.1117/12.138731
Show Author Affiliations
Wael I. Karain, Brigham Young Univ. (United States)
Larry V. Knight, Brigham Young Univ. (United States)
David D. Allred, Brigham Young Univ. (United States)
Arturo Reyes-Mena, Brigham Young Univ. (United States)


Published in SPIE Proceedings Vol. 1741:
Soft X-Ray Microscopy
Chris J. Jacobsen; James E. Trebes, Editor(s)

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