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Proceedings Paper

Recent developments in MOCVD of Hg1-xCdxTe
Author(s): Stuart J. C. Irvine
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Paper Abstract

Recent developments in metal-organic chemical vapor deposition (MOCVD) growth of the infrared detector material Hg1-xCdxTe can be subdivided into three main areas: reaction kinetics, in situ monitoring of growth and doping. The growth regime for most laboratories is kinetic/catalytic, and a good understanding of these growth mechanisms is essential for adequate control of growth rate and composition. In situ monitoring using laser reflectance can measure growth rate and composition and can be sensitive to morphology throughout a multilayer structure. This new information on the kinetic processes is a powerful diagnostic tool for the crystal grower. Doping the epitaxial layers with low volatility organometallics, or in the case of As using the diluted hydride, has been demonstrated by a number of laboratories, but problems with memory doping from indium and incorporation/activation efficiencies for arsenic will be resolved by understanding the surface chemistry. Arsenic implanted double layer heterostructure diode results show comparable 80 K ROA values to LPE p/n diodes.

Paper Details

Date Published: 10 December 1992
PDF: 9 pages
Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138643
Show Author Affiliations
Stuart J. C. Irvine, Rockwell International Science Ctr. (United Kingdom)

Published in SPIE Proceedings Vol. 1735:
Infrared Detectors: State of the Art
Wagih H. Makky, Editor(s)

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