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Proceedings Paper

Intersubband transitions and IR hot-electron transistors
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Paper Abstract

We present a systematic theoretical and experimental study on wavelength tuning and absorption lineshape of single bound state quantum well infrared photodetectors. We found that the absorption energy is determined by the energy level structure above the barriers as well as the shape of the quantum well ground state wave function. We calculated the absorption lineshape and show that it depends sensitively on the position of the final state relative to the global band structure of the detector. Using a quantum barrier as an electron energy high pass filter to discriminate against the lower energy dark current, we are able to increase the detectivity of the detector. The new device is referred as an IR hot-electron transistor. Its potential advantages in focal plane array applications will be discussed.

Paper Details

Date Published: 10 December 1992
PDF: 11 pages
Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138639
Show Author Affiliations
Kwong-Kit Choi, U.S. Army Electronics Technology and Devices Lab. (United States)
Monica Alba Taysing-Lara, U.S. Army Electronics Technology and Devices Lab. (United States)
Peter G. Newman, U.S. Army Electronics Technology and Devices Lab. (United States)
Wayne H. Chang, U.S. Army Electronics Technology and Devices Lab. (United States)


Published in SPIE Proceedings Vol. 1735:
Infrared Detectors: State of the Art
Wagih H. Makky, Editor(s)

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