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Proceedings Paper

Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and Si substrates
Author(s): Elliott R. Brown; F. W. Smith; George W. Turner; K. Alexander McIntosh; M. J. Manfra
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Paper Abstract

Nominally identical multiple-quantum-well detectors have been fabricated on GaAs and Si substrates, and the performance of these detectors has been compared at a temperature of 77 K and a wavelength of 10.2 micrometers . The two different substrates yield practically identical absorption characteristics, but the detector on the GaAs substrate has an approximately 60% higher specific detectivity because of its higher photoconductive gain and lower dark-current density.

Paper Details

Date Published: 10 December 1992
PDF: 11 pages
Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138635
Show Author Affiliations
Elliott R. Brown, Lincoln Lab./MIT (United States)
F. W. Smith, Lincoln Lab./MIT (United States)
George W. Turner, Lincoln Lab./MIT (United States)
K. Alexander McIntosh, Lincoln Lab./MIT (United States)
M. J. Manfra, Lincoln Lab./MIT (United States)

Published in SPIE Proceedings Vol. 1735:
Infrared Detectors: State of the Art
Wagih H. Makky, Editor(s)

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