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Proceedings Paper

Nonlinear behavior of photovoltage in Al/n-Si Schottky-barrier detector under IR laser radiation
Author(s): Steponas P. Asmontas; Dalius Seliuta; Edmundas Sirmulis
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Paper Abstract

The results of experimental investigations of the photovoltage generated in Schottky barrier under CO2 laser radiation are presented. We demonstrate for the first time the nonlinear dependence of photovoltage on the incident power density. This dependence indicates the multi-photon light absorption in the semiconductor-metal interface.

Paper Details

Date Published: 10 December 1992
PDF: 8 pages
Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138630
Show Author Affiliations
Steponas P. Asmontas, Semiconductor Physics Institute (Lithuania)
Dalius Seliuta, Semiconductor Physics Institute (Lithuania)
Edmundas Sirmulis, Institute of Physics (Lithuania)


Published in SPIE Proceedings Vol. 1735:
Infrared Detectors: State of the Art
Wagih H. Makky, Editor(s)

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