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Proceedings Paper

Infrared internal emission detectors
Author(s): Freeman D. Shepherd
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Paper Abstract

This paper will review the current state of the art of internal photoemission infrared detectors. That is, detectors which sense in a multi-step process, beginning with photon absorption in an electrode and terminating in emission of an excited carrier over a potential barrier into a semiconductor depletion region. Internal photoemission (PE) is a surface barrier sensing process similar to vacuum photoemission. This differs from competing bulk detection processes where both photoabsorption and carrier measurement takes place in the semiconductor. The PtSi/p-Si Schottky photodiode is the most advanced and best documented infrared PE device. Our interest is more general however and we will include devices where the photoemission 'electrode' may be a metal, a metal silicide or a degenerate semiconductor.

Paper Details

Date Published: 10 December 1992
PDF: 12 pages
Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138629
Show Author Affiliations
Freeman D. Shepherd, Rome Lab. (United States)


Published in SPIE Proceedings Vol. 1735:
Infrared Detectors: State of the Art
Wagih H. Makky, Editor(s)

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