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Proceedings Paper

GaAs quantum-well infrared detectors grown on 3-inch GaAs and silicon substrates
Author(s): Deepak K. Sengupta; Timothy U. Horton; Peter J. Apostolakis; Cynthia A. Rowe; Peter Mares; Milton Feng; Gregory E. Stillman; M. Dodd; S. Lance Cooper; Wen I. Wang
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Paper Abstract

This paper presents the preliminary analysis of quantum-well IR detectors grown on both GaAs and Si substrates.

Paper Details

Date Published: 10 December 1992
PDF: 9 pages
Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138626
Show Author Affiliations
Deepak K. Sengupta, Univ. of Illinois/Urbana-Champaign (United States)
Timothy U. Horton, Univ. of Illinois/Urbana-Champaign (United States)
Peter J. Apostolakis, Univ. of Illinois/Urbana-Champaign (United States)
Cynthia A. Rowe, Univ. of Illinois/Urbana-Champaign (United States)
Peter Mares, Univ. of Illinois/Urbana-Champaign (United States)
Milton Feng, Univ. of Illinois/Urbana-Champaign (United States)
Gregory E. Stillman, Univ. of Illinois/Urbana-Champaign (United States)
M. Dodd, U. S. Air Force Wright Lab. (United States)
S. Lance Cooper, Univ. of Illinois/Urbana-Champaign (United States)
Wen I. Wang, Columbia Univ. (United States)


Published in SPIE Proceedings Vol. 1735:
Infrared Detectors: State of the Art
Wagih H. Makky, Editor(s)

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