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Proceedings Paper

GaAs/AlGaAs multi-quantum-well far-infrared photodetectors grown by the MOVPE process
Author(s): Erwang Mao; Zhenghao Lu; Byoung-Whi Kim; Tamsin McCormick; Eung-gie Oh; Arnoldo Majerfeld; Kwong-Kit Choi; Kenneth A. Jones
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Paper Abstract

We demonstrate that GaAs/AlGaAs multiple-quantum-well (MQW) structures grown by atmospheric pressure metalorganic vapor phase epitaxy have state-of-the-art structural, optical, and electrical properties. The 50-well MQW structures, with well thicknesses ranging from 14 to 90 angstroms, were analyzed by atomic resolution transmission electron microscopy, photoluminescence, and deep-level transient spectroscopy with the aid of a theoretical model for the eigenstates of the MQWs. It is shown that the MQW structures have a layer-to-layer thickness uniformity, interface roughness, and heterojunction abruptness of only one monolayer. A selectively doped MQW structure shows an infrared absorption efficiency of 15% at a wavelength of 11 micrometers .

Paper Details

Date Published: 10 December 1992
PDF: 4 pages
Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138625
Show Author Affiliations
Erwang Mao, Univ. of Colorado/Boulder (United States)
Zhenghao Lu, Univ. of Colorado/Boulder (United States)
Byoung-Whi Kim, Univ. of Colorado/Boulder (United States)
Tamsin McCormick, Univ. of Colorado/Boulder (United States)
Eung-gie Oh, Univ. of Colorado/Boulder (United States)
Arnoldo Majerfeld, Univ. of Colorado/Boulder (United States)
Kwong-Kit Choi, Army Research Labs./ETDL (United States)
Kenneth A. Jones, Army Research Labs./ETDL (United States)

Published in SPIE Proceedings Vol. 1735:
Infrared Detectors: State of the Art
Wagih H. Makky, Editor(s)

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