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Proceedings Paper

Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substrates
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Paper Abstract

We discuss the influence of the Hg flux on defect formation and we show that under optimized growth parameters the crystal quality of HgCdTe epilayer is similar to that of the CdZnTe substrate. We confirm the MBE growth of HgCdTe requires stringent control in growth conditions and occurs under Te saturated conditions. We show also that diffusion of impurities originating from the substrates is a very serious problem. Indium doped HgCdTe layers have been found to exhibit excellent structural and electrical characteristics.

Paper Details

Date Published: 10 December 1992
PDF: 10 pages
Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138618
Show Author Affiliations
Jean-Pierre Faurie, Univ. of Illinois/Chicago (United States)
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)
Priyalal S. Wijewarnasuriya, EPIR Ltd. (United States)

Published in SPIE Proceedings Vol. 1735:
Infrared Detectors: State of the Art
Wagih H. Makky, Editor(s)

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