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Proceedings Paper

Recent developments in the search for new semiconductor gamma-ray detector materials
Author(s): Jim C. Lund; Fred Olschner; Kanai S. Shah; Michael R. Squillante
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Paper Abstract

The requirements of a semiconductor material intended to operate in a gamma-ray detector at room temperatures are discussed, and the status of the search for alternative materials is reviewed. The important material characteristics of a semiconductor gamma-ray detector material are high average atomic number, material's uniformity, resistivity, and electron and holes transport properties. Materials under investigation include GaAs, InP, TlBr, and PbI2. Theoretically, it is considered to be feasible to built a large volume semiconductor gamma-ray detector capable of good energy resolution at room temperature. But it is very unlikely that a semiconductor detector with germanium-like performance will be available in the next five years.

Paper Details

Date Published: 22 December 1992
PDF: 6 pages
Proc. SPIE 1734, Gamma-Ray Detectors, (22 December 1992); doi: 10.1117/12.138582
Show Author Affiliations
Jim C. Lund, Radiation Monitoring Devices, Inc. (United States)
Fred Olschner, Radiation Monitoring Devices, Inc. (United States)
Kanai S. Shah, Radiation Monitoring Devices, Inc. (United States)
Michael R. Squillante, Radiation Monitoring Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 1734:
Gamma-Ray Detectors
Elena Aprile, Editor(s)

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