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Proceedings Paper

Recent developments in CdZnTe gamma-ray detector technology
Author(s): Jack F. Butler; F. Patrick Doty; Clinton L. Lingren
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Paper Abstract

A discussion of recent results in the preparation of Cd1-xZnxTe crystals by a high pressure Bridgman (HPB) method and use of the crystals for gamma- and x-ray detectors is presented. Resistivities in excess of 1011 ohm-cm are achieved in Cd1-xZnxTe without impurity doping. The consequential low detector leakage currents lead to excellent energy resolution, 8.4% (FWHM) at 30 keV, for example. Useful energy spectroscopy can be performed at temperatures up to 100 degree(s)C. The dependence of leakage current on temperature from -40 degree(s)C to 100 degree(s)C implies a Fermi level at mid-gap for x equals 0.2. HPB grown Cd1-xZnxTe crystals exhibit relatively low defect content, as evidenced by etch-pit-densities <EQ 104 cm-2, double-crystal-rocking-curve linewidths of 10 - 15 arc-seconds and sharp, bright emission lines, with excitonic features, in low temperature photoluminescence measurements. Results of flash x ray experiments indicate high current sensitivity, low leakage current, and good temporal response. Preliminary results of Cd1-xZnxTe imaging detector array studies are discussed.

Paper Details

Date Published: 22 December 1992
PDF: 9 pages
Proc. SPIE 1734, Gamma-Ray Detectors, (22 December 1992); doi: 10.1117/12.138580
Show Author Affiliations
Jack F. Butler, Aurora Technologies, Inc. (United States)
F. Patrick Doty, Aurora Technologies, Inc. (United States)
Clinton L. Lingren, Aurora Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 1734:
Gamma-Ray Detectors
Elena Aprile, Editor(s)

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