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Proceedings Paper

Novel quantum-well optoelectronic switching device with stimulated emission
Author(s): Szutsun Simon Ou; Jane J. Yang; Michael Jansen
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Paper Abstract

A novel GaAs/GaAlAs quantum well optoelectronic switching device, which exhibits an s-type negative differential resistance at room temperature and emits high performance stimulated emission, was demonstrated. The device structure is similar to the conventional separate confinement heterojunction quantum well laser, and thus can be easily integrated with state-of-the-art optoelectronic integrated circuits. The devices can be switched optically and/or electrically. Threshold current densities of 1.2 kA/sq cm, differential quantum efficiencies as high as 67 percent (0.5 W/A slope efficiency per facet) and output power in excess of 50 mW per facet were obtained.

Paper Details

Date Published: 2 December 1992
PDF: 8 pages
Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); doi: 10.1117/12.138404
Show Author Affiliations
Szutsun Simon Ou, TRW Space and Technology Group (United States)
Jane J. Yang, TRW Space and Technology Group (United States)
Michael Jansen, TRW Space and Technology Group (United States)


Published in SPIE Proceedings Vol. 1703:
Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III
Shi-Kay Yao; Brian M. Hendrickson, Editor(s)

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