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Proceedings Paper

High-speed MSM photodetectors for millimeter waves
Author(s): Kerry I. Litvin; Jinwook Burm; David W. Woodard; Pierre Mandeville; William J. Schaff; Mark M. Gitin; Lester Fuess Eastman
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Paper Abstract

This presentation deals with MSM photodetectors and post-detection amplifiers capable of responding at millimeter-wave frequencies. Monolithic integration, incorporating pseudomorphic MODFETs (SMODFETs) as the amplifiers, is used with coplanar waveguide resonant impedance transformers. Interdigitated Schottky barrier metal fingers, with submicron spacing and unique Bragg reflector layers to maximize light absorption, are used for the photodetector. For a 0.5-micron gap detector, a measurement shows a flat frequency response at least up to 40 GHz. Quantum efficiency is expected to be more than 60 percent for a 0.75 micron gap and 0.25 micron finger detector with 0.375 micron absorption layer.

Paper Details

Date Published: 2 December 1992
PDF: 8 pages
Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); doi: 10.1117/12.138399
Show Author Affiliations
Kerry I. Litvin, Cornell Univ. (United States)
Jinwook Burm, Cornell Univ. (United States)
David W. Woodard, Cornell Univ. (United States)
Pierre Mandeville, Cornell Univ. (United States)
William J. Schaff, Cornell Univ. (United States)
Mark M. Gitin, Cornell Univ. (United States)
Lester Fuess Eastman, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 1703:
Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III
Shi-Kay Yao; Brian M. Hendrickson, Editor(s)

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