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Proceedings Paper

Design and fabrication of InGaAsP/InP waveguide modulators for microwave applications
Author(s): Paul K. L. Yu; Yet Zen Liu; Albert L. Kellner; Andrew R. Williams; Benson C. Lam; X. S. Jiang
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Paper Abstract

InGaAs/InP multiple quantum well electroabsorption modulators grown by MOCVD are designed and fabricated for 1.5 micrometers wavelength operation. For rib loaded waveguide modulators fabricated on n-InP substrate with a 3 micrometers rib width and a 2 micrometers intrinsic waveguide layer, a capacitance of 0.2 to 0.3 pF and a reverse breakdown voltage > 20 V are obtained. The extinction ratio of the modulators is more than 14 dB and the 3 dB optical bandwidth is 18 GHz. The modulator's RF efficiency and optical insertion loss still need to be improved. For modulators made on semi-insulating InP substrate, a capacitance in the range 0.1 to 0.2 pF is measured.

Paper Details

Date Published: 2 December 1992
PDF: 9 pages
Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); doi: 10.1117/12.138398
Show Author Affiliations
Paul K. L. Yu, Univ. of California/San Diego (United States)
Yet Zen Liu, Univ. of California/San Diego (United States)
Albert L. Kellner, Univ. of California/San Diego (United States)
Andrew R. Williams, Univ. of California/San Diego (United States)
Benson C. Lam, Univ. of California/San Diego (United States)
X. S. Jiang, Univ. of California/San Diego (United States)


Published in SPIE Proceedings Vol. 1703:
Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III
Shi-Kay Yao; Brian M. Hendrickson, Editor(s)

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