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Proceedings Paper

Effects of quantum-well design on the optical and microwave performance of strained-layer GaInAs/GaAs lasers
Author(s): Sean S. O'Keefe; Luke F. Lester; D. Teng; William J. Schaff; Lester Fuess Eastman
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Paper Abstract

By introducing strain into semiconductor lasers using GaAs/Ga(1-x)In(x)As quantum wells, their modulation bandwidth has been increased to beyond 20 GHz. Our approach to high modulation bandwidth strained layer quantum well lasers has been to fabricate short cavity (less than l00-micron) multiple quantum well (MQW) structures. In order to fabricate lasers of this length, the facets must be etched by chemically assisted ion beam etching (CAIBE) rather than cleaving. In such short cavity MQW lasers fabricated by CAIBE using two different layer structures, a 3-dB modulation bandwidth of 28 GHz is obtainable under CW conditions. The current study investigates (1) the growth of different quantum well and barrier materials and their effects on device performance, (2) the dependence of differential gain and damping on quantum well width, depth, and number, and (3) the relationship between threshold current and high speed performance. Design criteria for optimizing high-speed performance are presented.

Paper Details

Date Published: 2 December 1992
PDF: 10 pages
Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); doi: 10.1117/12.138396
Show Author Affiliations
Sean S. O'Keefe, Cornell Univ. (United States)
Luke F. Lester, Cornell Univ. (United States)
D. Teng, Cornell Univ. (United States)
William J. Schaff, Cornell Univ. (United States)
Lester Fuess Eastman, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 1703:
Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III
Shi-Kay Yao; Brian M. Hendrickson, Editor(s)

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