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Proceedings Paper

Linear AlGaAs/GaAs waveguide modulator at lambda=1.32 um utilizing lateral mode interference
Author(s): Charles T. Sullivan; Sayan D. Mukherjee; Edith Kalweit; Terry Marta; W. Tim Goldberg; Mary K. Hibbs-Brenner; B. Walterson; M. Nisa Khan
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Paper Abstract

Optical modulators based on electrooptically-induced lateral mode interference in multimode AlGaAs/GaAs waveguides at lambda = 1.32 micron are investigated for high-frequency linear applications. The key design issue is achieving higher slope efficiency while maintaining significant linearity improvements over sinusoidal interference-based modulator designs. We report experimental results which demonstrate indirectly a reduction in intermodulation distortion of 48 dB compared to an ideal Mach-Zehnder interferometer.

Paper Details

Date Published: 2 December 1992
PDF: 8 pages
Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); doi: 10.1117/12.138392
Show Author Affiliations
Charles T. Sullivan, Honeywell Systems and Research Ctr. (United States)
Sayan D. Mukherjee, Honeywell Systems and Research Ctr. (United States)
Edith Kalweit, Honeywell Systems and Research Ctr. (United States)
Terry Marta, Honeywell Systems and Research Ctr. (United States)
W. Tim Goldberg, Honeywell Systems and Research Ctr. (United States)
Mary K. Hibbs-Brenner, Honeywell Systems and Research Ctr. (United States)
B. Walterson, Honeywell Systems and Research Ctr. (United States)
M. Nisa Khan, Honeywell Systems and Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1703:
Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III
Shi-Kay Yao; Brian M. Hendrickson, Editor(s)

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