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Proceedings Paper

Thin-layer dielectric structure for laser diagnostics of microwave radiation
Author(s): S. A. Krupenko; E. L. Ryazanova
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Paper Abstract

Laser diagnostics of microwave radiation alreadY presented in some articles means interaction of weak monochromatic laser light with powerful microwave radiation in a semiconductor laYer. This interaction maY be described bY known dependencies that determine changing in reflection index (for optical and microwave radiation) caused bY changing phYsical Properties of the semiconductor under the influence of microwave radiation. One of those dependencies is varying mobility of free charge carriers because of shifting its electron temperature.

Paper Details

Date Published: 2 December 1992
PDF: 7 pages
Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); doi: 10.1117/12.138382
Show Author Affiliations
S. A. Krupenko, Moscow State Univ. (Russia)
E. L. Ryazanova, Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 1703:
Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III
Shi-Kay Yao; Brian M. Hendrickson, Editor(s)

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