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Proceedings Paper

640 x 480 PtSi MOS infrared imager
Author(s): Donald J. Sauer; Frank V. Shallcross; Fu-Lung Hseuh; Grazyna M. Meray; Peter A. Levine; Harvey R. Gilmartin; Thomas S. Villani; Benjamin J. Esposito; John R. Tower
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Paper Abstract

The design and performance of a 640 (H) X 480 (V) element PtSi Schottky-barrier infrared image sensor employing a low-noise MOS X-Y addressable readout multiplexer and on-chip low-noise output amplifier is described. The imager achieves an NEDT equals 0.10 K at 30 Hz frame rates with f/1.5 optics (300 K background). The MOS design provides a measured saturation level of 1.5 X 106 electrons (5 V bias) and a noise floor of 300 rms electrons per pixel. A multiplexed horizontal/vertical input address port and on-chip decoding is used to load scan data into CMOS horizontal and vertical scanning registers. This allows random access to any sub-frame in the 640 X 480 element focal plane array. By changing the digital pattern applied to the vertical scan register, the FPA can be operated in either an interlaced or non-interlaced format, and the integration time may be varied over a wide range (60 microsecond(s) to > 30 ms, for RS 170 operation) resulting in `electronic shutter' variable exposure control. The pixel size of 24 micrometers X 24 micrometers results in a fill factor of 38% for 1.5 micrometers process design rules. The overall die size for the IR imager is 13.7 mm X 17.2 mm. All digital inputs to the chip are TTL compatible and include ESD protection.

Paper Details

Date Published: 1 September 1992
PDF: 12 pages
Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); doi: 10.1117/12.137819
Show Author Affiliations
Donald J. Sauer, David Sarnoff Research Ctr. (United States)
Frank V. Shallcross, David Sarnoff Research Ctr. (United States)
Fu-Lung Hseuh, David Sarnoff Research Ctr. (United States)
Grazyna M. Meray, David Sarnoff Research Ctr. (United States)
Peter A. Levine, David Sarnoff Research Ctr. (United States)
Harvey R. Gilmartin, David Sarnoff Research Ctr. (United States)
Thomas S. Villani, David Sarnoff Research Ctr. (United States)
Benjamin J. Esposito, David Sarnoff Research Ctr. (United States)
John R. Tower, David Sarnoff Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1685:
Infrared Detectors and Focal Plane Arrays II
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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