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Proceedings Paper

Auto-gain-control characteristics of InSb P+/N diode with high sheet resistance
Author(s): Yongping Ni
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Paper Details

Date Published: 1 September 1992
PDF: 6 pages
Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); doi: 10.1117/12.137811
Show Author Affiliations
Yongping Ni, Luoyang Optic-Electronic Institute (China)


Published in SPIE Proceedings Vol. 1685:
Infrared Detectors and Focal Plane Arrays II
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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