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Proceedings Paper

p-channel MIS double-metal process InSb monolithic unit cell for infrared imaging
Author(s): Avishai Kepten; Yosef Y. Shacham-Diamand; S. E. Schacham
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Paper Abstract

A new approach to the fabrication of monolithic infrared focal plane arrays is presented and examined in this paper. The array is based on photovoltaic diodes, parallel integration capacitors, and MIS field effect transistors (FET). The photodiode is connected directly to the integrating capacitor while the MISFET serves as a pass gate to the video line. This configuration is operated in the pseudo-staring mode. The array was implemented in InSb, in a process based on a new passivation in which a photo chemical oxidation of InSb is followed by a conventional photo chemical SiO2 growth. A two-level metallization process was developed serving both for electrical connection and optical coverage. Two configurations were tested for the layout of the two metal layers. In addition, the lower metallization was implemented in Cr, Ti, and Al. The optimal structure is a planar array with Cr as the first metal layer which forms the source and drain contacts.

Paper Details

Date Published: 1 September 1992
PDF: 12 pages
Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); doi: 10.1117/12.137808
Show Author Affiliations
Avishai Kepten, Semi-Conductor Devices Inc. (Israel)
Yosef Y. Shacham-Diamand, Cornell Univ. (United States)
S. E. Schacham, Technion-Israel Institute of Technology (Israel)


Published in SPIE Proceedings Vol. 1685:
Infrared Detectors and Focal Plane Arrays II
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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