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Proceedings Paper

Dependence of Fermi level of Hg0.8Cd0.2Te on impurity concentration and temperature
Author(s): Fei-Fei Wu; Wenzhen Song; De-chun Li; Jingxuan Yan; Jiaxiong Fang; Guosen Xu
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Paper Abstract

The relationship between the Fermi level of MCT and the impurity concentration and temperature was calculated with considering the special characteristics of nonparabolic bands of MCT material. And then an imitative formula which coincide very well with the values of log log plot of NDA versus T(m/m0) the curves for constant reduced Fermi level are partially straight lines only have been obtained. Key words: Fermi level, nonparabolic band, Burstein—Moss effect

Paper Details

Date Published: 1 September 1992
PDF: 9 pages
Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); doi: 10.1117/12.137805
Show Author Affiliations
Fei-Fei Wu, Shandong Univ. (China)
Wenzhen Song, Shandong Univ. (China)
De-chun Li, Shandong Univ. (China)
Jingxuan Yan, Qingdao Univ. (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)
Guosen Xu, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 1685:
Infrared Detectors and Focal Plane Arrays II
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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