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Proceedings Paper

Producibility of (Hg,Cd)Te by dipping liquid phase epitaxy
Author(s): Luigi Colombo; Glenn H. Westphal; Pok-Kai K. Liao; M. C. Chen; Herbert F. Schaake
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Paper Abstract

Liquid phase epitaxy(LPE) of (Hg,Cd)Te thick films from large tellurium-rich solutions was used to produce very large quantities of high quality films used for the fabrication of focal plane arrays. The composition uniformity is found to be ix=±O.OO1 for x=O.223 over an area ranging from 43cm2 to 54cm2. The reproducibility for 2OO growth runs, <8000cm2, is x=0.226±0.0033 or equivalently Xco9.8Si44Pm. The electrical quality of the material for diodes is evaluated by growing n-type films with an indium back-doping of —5x1014cm3. The carrier concentratio:ri is reproducible and in good agreement with the indium doping level. The average carrier concentration at 77K is 5.3±2.4x10'4cm3 with a mobility of 13 1±0.31x105cm2/V sec. Th.e minority carrier lifetime for the n-type films is Auger limited with an average value of 68±2.0isec.

Paper Details

Date Published: 12 August 1992
PDF: 7 pages
Proc. SPIE 1683, Infrared Focal Plane Array Producibility and Related Materials, (12 August 1992); doi: 10.1117/12.137777
Show Author Affiliations
Luigi Colombo, Texas Instruments Inc. (United States)
Glenn H. Westphal, Texas Instruments Inc. (United States)
Pok-Kai K. Liao, Texas Instruments Inc. (United States)
M. C. Chen, Texas Instruments Inc. (United States)
Herbert F. Schaake, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 1683:
Infrared Focal Plane Array Producibility and Related Materials
Raymond S. Balcerak; Paul W. Pellegrini; Dean A. Scribner, Editor(s)

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