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Proceedings Paper

HgCdTe on Si for monolithic focal plane arrays
Author(s): Kenneth R. Zanio; Reed B. Mattson; Muren Chu; Sevag Terterian
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Paper Abstract

HgCdTe was grown on Si substrates containing CCD and CMOS readout (R/O) circuits. Evaporated aluminum (Al) thin films were used to interconnect MWIR HgCdTe detector arrays with 1 X 64 scanned R/Os to demonstrate monolithic integration and eliminate indium bump bonds required to fabricate hybrid infrared focal plane arrays (IRFPAs). Conformal electroplated gold (Au) thin films on 32 X 64 staring arrays were used to integrate isolated MWIR HgCdTe detectors in each of the 100 micrometers X 100 micrometers unit cells to the input of the CMOS R/Os. Five micron wide Au thin films were used to make a conformal interconnect to 10 micrometers high HgCdTe layers in 40 micrometers X 40 micrometers unit cells within 256 X 256 arrays. Multiple thin film interconnects do not limit the size of the unit cell for dual band and multispectral staring arrays.

Paper Details

Date Published: 12 August 1992
PDF: 12 pages
Proc. SPIE 1683, Infrared Focal Plane Array Producibility and Related Materials, (12 August 1992); doi: 10.1117/12.137770
Show Author Affiliations
Kenneth R. Zanio, MOSET Corp. (United States)
Reed B. Mattson, MOSET Corp. (United States)
Muren Chu, Fermionics Corp. (United States)
Sevag Terterian, Fermionics Corp. (United States)


Published in SPIE Proceedings Vol. 1683:
Infrared Focal Plane Array Producibility and Related Materials
Raymond S. Balcerak; Paul W. Pellegrini; Dean A. Scribner, Editor(s)

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